Si2H6 doping of InP in gas-source molecular beam epitaxy using triethylindium and phosphine

被引：0

作者：

Ando, Hideyasu ^{[1
]}

Okamoto, Naoya ^{[1
]}

Sandhu, Adarsh ^{[1
]}

Fujii, Toshio ^{[1
]}

机构：

[1] Fujitsu Lab Ltd, Atsugi, Japan

来源：

| 1600年 / 30期

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[1] SI2H6 DOPING OF INP IN GAS-SOURCE MOLECULAR-BEAM EPITAXY USING TRIETHYLINDIUM AND PHOSPHINE
ANDO, H
OKAMOTO, N
SANDHU, A
FUJII, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A): : L1696 - L1698
[2] Modeling growth in Si gas-source molecular beam epitaxy using Si2H6
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[4] Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
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[5] Modeling growth in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
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[7] SI DANGLING BONDS ON SI(100) SURFACE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH SI2H6
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[8] LIMITING CONDITIONS OF SI SELECTIVE EPITAXIAL-GROWTH IN SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY
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[9] Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
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[10] SI(001)2X1 GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 - GROWTH-KINETICS AND BORON DOPING
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