ANOMALOUS TEMPERATURE DEPENDENCE OF THE HALL MOBILITY IN COMPENSATED n-TYPE Ge.

被引：0
|
作者：
Golovkina, E.D.
Levchenya, N.N.
Shik, A.Ya.
机构：
来源：
| 1600年 / 10期
关键词：
712 Electronic and Thermionic Materials - 942 Electric and Electronic Measuring Instruments;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
22
引用
收藏
相关论文
共 50 条
  • [1] ANOMALOUS TEMPERATURE-DEPENDENCE OF HALL-MOBILITY IN COMPENSATED N-TYPE GE
    GOLOVKINA, ED
    LEVCHENYA, NN
    SHIK, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 229 - 230
  • [2] TEMPERATURE DEPENDENCE OF THE ANISOTROPIC DRIFT VELOCITY OF HOT ELECTRONS IN n-TYPE Ge.
    Yakovlev, V.A.
    Sytilina, N.G.
    1972, 6 (06): : 891 - 895
  • [3] HALL-EFFECT IN COMPENSATED N-TYPE GE
    BARANSKII, PI
    BAIDAKOV, VV
    DAKHOVSKII, IV
    SEITOV, EP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (05): : 696 - 697
  • [4] TEMPERATURE-DEPENDENCE OF HALL FACTOR IN LOW-COMPENSATED N-TYPE SILICON
    OHTA, E
    SAKATA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1795 - 1804
  • [5] Temperature dependence of the Hall mobility of n-type 3C-SiC
    Weng, XM
    Cui, HL
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (33) : 7089 - 7094
  • [6] INFLUENCE OF DEEP ENERGY LEVELS ON THE PIEZORESISTANCE OF n-TYPE Ge.
    Semenyuk, A.K.
    Pankevich, Z.V.
    Fedosov, A.V.
    Doskoch, V.P.
    1972, 6 (05): : 848 - 849
  • [7] INFLUENCE OF THE COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN n-TYPE Ge.
    Bannaya, V.F.
    Veselova, L.I.
    Gershenzon, E.M.
    Chuenkov, V.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (10): : 1315 - 1318
  • [8] INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON DRAG BY PHONONS IN n-TYPE Ge.
    Baranskii, P.I.
    Buda, I.S.
    Kolomoets, V.V.
    Samoilovich, A.G.
    Sus', V.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (11): : 1402 - 1404
  • [9] Temperature dependence of mobility in n-type short-period Si-Ge superlattices
    Pearsall, TP
    DiVergilio, A
    Gassot, P
    Maude, D
    Presting, H
    Kasper, E
    Jager, W
    Stenkamp, D
    APPLIED PHYSICS LETTERS, 1998, 72 (01) : 76 - 78
  • [10] INVERSION OF THE SIGN OF THE THERMOELECTRIC POWER OF UNIAXIALLY DEFORMED n-TYPE Ge.
    Pankratova, Zh.K.
    1600, (09):
12345