Characterization of stress generated in polycrystalline silicon during thermal oxidation by laser Raman spectroscopy

被引:0
|
作者
机构
[1] Kawata, Masato
[2] Katoda, Takashi
来源
Kawata, Masato | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 75期
关键词
7;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] RESISTIVITY CHANGES IN LASER-ANNEALED POLYCRYSTALLINE SILICON DURING THERMAL ANNEALING
    SHIBATA, T
    IIZUKA, H
    KOHYAMA, S
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1979, 35 (01) : 21 - 23
  • [22] Raman spectroscopy of heavily doped polycrystalline silicon thin films
    Nickel, NH
    Lengsfeld, P
    Sieber, I
    PHYSICAL REVIEW B, 2000, 61 (23): : 15558 - 15561
  • [23] Thermal characterization of epitaxial grown polycrystalline silicon
    Liebchen, Robert
    Breitschaedel, Oliver
    Durmaz, Ali Riza
    Griesinger, Andreas
    THIN SOLID FILMS, 2016, 606 : 99 - 105
  • [24] STRESS MEASUREMENT BY MICRORAMAN SPECTROSCOPY OF POLYCRYSTALLINE SILICON STRUCTURES
    BENRAKKAD, MS
    BENITEZ, MA
    ESTEVE, J
    LOPEZVILLEGAS, JM
    SAMITIER, J
    MORANTE, JR
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) : 132 - 135
  • [25] Evaluation of Residual Thermal Stress in Cu Metalized Silicon Nitride Substrates by Raman Spectroscopy
    Hirao, Kiyoshi
    Fukuda, Shinji
    Miyazaki, Hiroyuki
    Zhou, You
    Hyuga, Hideki
    Iwakiri, Shoji
    2018 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING AND IMAPS ALL ASIA CONFERENCE (ICEP-IAAC), 2018, : 194 - 196
  • [26] Characterization of silicon carbide using Raman spectroscopy
    Burton, J.C.
    Long, F.H.
    Khlebnikov, Y.
    Khlebnikov, I.
    Parker, M.
    Sudarshan, T.S.
    Materials Science Forum, 2000, 338
  • [27] Characterization of defects in silicon carbide by Raman spectroscopy
    Hundhausen, M.
    Puesche, R.
    Roehrl, J.
    Ley, L.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07): : 1356 - 1368
  • [28] THE CHARACTERIZATION OF POROUS SILICON BY RAMAN-SPECTROSCOPY
    GOODES, SR
    JENKINS, TE
    BEALE, MIJ
    BENJAMIN, JD
    PICKERING, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 483 - 487
  • [29] Characterization of mixed phase silicon by Raman spectroscopy
    Ledinsky, M.
    Fekete, L.
    Stuchlik, J.
    Mates, T.
    Fejfar, A.
    Kocka, J.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1209 - 1212
  • [30] Characterization of silicon carbide using Raman spectroscopy
    Burton, JC
    Long, FH
    Khlebnikov, Y
    Khlebnikov, I
    Parker, M
    Sudarshan, TS
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 615 - 618