Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: formation of highly uniform quantum-dot arrays

被引：0
|
作者：
Paul-Drude-Inst fuer, Festkoerperelektronik, Berlin, Germany [1 ]
机构：
来源：
J Electron Mater | / 1卷 / 36-40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates
    Gong, Q
    Nötzel, R
    Schönherr, HP
    Ploog, KH
    APPLIED SURFACE SCIENCE, 2002, 190 (1-4) : 480 - 484
  • [22] Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy
    Yoh, K
    Nakasaki, R
    Takabayashi, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1164 - 1167
  • [23] InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy
    Pal, D.
    Walker, J.
    Towe, E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1532 - 1535
  • [24] FORMATION OF GAAS RIDGE QUANTUM-WIRE STRUCTURES BY MOLECULAR-BEAM EPITAXY ON PATTERNED SUBSTRATES
    KOSHIBA, S
    NOGE, H
    AKIYAMA, H
    INOSHITA, T
    NAKAMURA, Y
    SHIMIZU, A
    NAGAMUNE, Y
    TSUCHIYA, M
    KANO, H
    SAKAKI, H
    WADA, K
    APPLIED PHYSICS LETTERS, 1994, 64 (03) : 363 - 365
  • [25] Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
    Henini, M.
    Ibanez, J.
    Schmidbauer, M.
    Shafi, M.
    Novikov, S. V.
    Turyanska, L.
    Molina, S. I.
    Sales, D. L.
    Chisholm, M. F.
    Misiewicz, J.
    APPLIED PHYSICS LETTERS, 2007, 91 (25)
  • [26] Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height
    Gong, Q
    Nötzel, R
    Schönherr, HP
    Ploog, KH
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (1-2) : 23 - 29
  • [27] ATOMIC HYDROGEN-ASSISTED GAAS MOLECULAR-BEAM EPITAXY
    OKADA, Y
    SUGAYA, T
    OHTA, S
    FUJITA, T
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01): : 238 - 244
  • [28] Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beam
    Morishita, Y
    Ishiguro, M
    Miura, S
    Enmei, Y
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1291 - 1295
  • [29] Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates
    Selcuk, E.
    Silov, A. Yu.
    Notzel, R.
    APPLIED PHYSICS LETTERS, 2009, 94 (26)
  • [30] Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy
    Takebe, T
    Watanabe, T
    Fujita, K
    SUPERLATTICES AND MICROSTRUCTURES, 1998, 24 (01) : 1 - 6
12345