Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: formation of highly uniform quantum-dot arrays

被引：0
|
作者：
Paul-Drude-Inst fuer, Festkoerperelektronik, Berlin, Germany [1 ]
机构：
来源：
J Electron Mater | / 1卷 / 36-40期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)a substrates: Formation of highly uniform quantum-dot arrays
    Nötzel R.
    Ramsteiner M.
    Niu Z.
    Trampert A.
    Däweritz L.
    Ploog K.H.
    Journal of Electronic Materials, 1998, 27 (1) : 36 - 40
  • [2] Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays
    Notzel, R
    Ramsteiner, M
    Niu, ZC
    Trampert, A
    Daweritz, L
    Ploog, KH
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (01) : 36 - 40
  • [3] Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates
    Schonherr, HP
    Fricke, J
    Niu, ZC
    Friedland, KJ
    Notzel, R
    Ploog, KH
    APPLIED PHYSICS LETTERS, 1998, 72 (05) : 566 - 568
  • [4] Novel GaAs quantum wire and dot arrays by hydrogen-assisted molecular beam epitaxy on high-index substrates
    Paul Drude Inst for Solid State, Electronics, Berlin, Germany
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 1 B (443-448):
  • [5] Novel GaAs quantum wire and dot arrays by hydrogen-assisted molecular beam epitaxy on high-index substrates
    Ploog, KH
    Nötzel, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 443 - 448
  • [6] Formation of quantum dot structures by atomic hydrogen assisted selective area molecular beam epitaxy
    Suzuki, Y
    Shimoda, M
    Okada, Y
    Kawabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B): : L1538 - L1540
  • [7] Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy
    Zhou, DY
    Lan, Q
    Kong, YC
    Miao, ZH
    Feng, SL
    Niu, ZC
    CHINESE PHYSICS, 2003, 12 (02): : 218 - 221
  • [8] Array of the self-organized InGaAs quantum dots on GaAs (311)B substrates by atomic hydrogen-assisted molecular beam epitaxy
    Chun, YJ
    Nakajima, S
    Kawabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B): : L1075 - L1076
  • [9] A MOLECULAR-BEAM EPITAXY APPROACH TO QUANTUM-DOT ARRAYS
    KANEKO, M
    SHIMODA, M
    OKADA, Y
    KAWABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B): : 4390 - 4391
  • [10] Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks
    Mei, X
    Blumin, M
    Sun, M
    Kim, D
    Wu, ZH
    Ruda, HE
    Guo, QX
    APPLIED PHYSICS LETTERS, 2003, 82 (06) : 967 - 969
12345