Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides

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Technology Development Group, Advanced Micro Devices, Inc., Sunnyvale, CA 94088-3453, United States [1 ]
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IEEE Electron Device Lett | / 6卷 / 262-264期
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Number:; -; Acronym:; NSF; Sponsor: National Science Foundation; ONR; Sponsor: Office of Naval Research; SRC; Sponsor: Semiconductor Research Corporation;
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