InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

被引：0
|
作者：
Ziegler, V. [1 ]
Gaessler, C. [1 ]
Woelk, C. [1 ]
Berlec, F.-J. [1 ]
Deufel, R. [1 ]
Berg, M. [1 ]
Dickmann, J. [1 ]
Schumacher, H. [1 ]
Alekseev, E. [1 ]
Pavlidis, D. [1 ]
机构：
[1] Research Cent Ulm, Ulm, Germany
来源：
| 2000年
关键词：
Field effect transistors - Heterojunctions - Millimeter wave devices - Phase shifters - Photodiodes - Semiconducting indium phosphide - Semiconductor switches - Spurious signal noise;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC.
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