TWO-DIMENSIONAL SHORT CHANNEL MOSFET STEADY STATE AND SUBSTRATE CURRENT SIMULATION.

被引：0
|
作者：
Du Min [1 ]
Huang, Chang [1 ]
机构：
[1] Shanxi Lishan Microelectronics Corp, Shanxi, China, Shanxi Lishan Microelectronics Corp, Shanxi, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1988年 / 9卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：1 / 6
相关论文
共 50 条
  • [31] TWO-DIMENSIONAL SIMULATION OF PHOTOLITHOGRAPHY ON REFLECTIVE STEPPED SUBSTRATE
    MATSUZAWA, T
    MONIWA, A
    HASEGAWA, N
    SUNAMI, H
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1987, 6 (03) : 446 - 451
  • [32] A two-dimensional subthreshold current model for strained-Si MOSFET
    Qin ShanShan
    Zhang HeMing
    Hu HuiYong
    Wang GuanYu
    Wang XiaoYan
    Qu JiangTao
    Xu XiaoBo
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 54 (12) : 2181 - 2185
  • [33] A two-dimensional subthreshold current model for strained-Si MOSFET
    QIN ShanShan
    Science China(Physics,Mechanics & Astronomy), 2011, (12) : 2181 - 2185
  • [34] A two-dimensional subthreshold current model for strained-Si MOSFET
    ShanShan Qin
    HeMing Zhang
    HuiYong Hu
    GuanYu Wang
    XiaoYan Wang
    JiangTao Qu
    XiaoBo Xu
    Science China Physics, Mechanics and Astronomy, 2011, 54 : 2181 - 2185
  • [35] Theoretical modeling of two-dimensional distributions of drain and substrate currents in MOSFET'S
    Tang, Yusheng
    Hao, Yue
    Tien Tzu Hsueh Pao/Acta Electronica Sinica, 1999, 27 (07): : 72 - 76
  • [36] MOSFET SUBSTRATE CURRENT MODEL FOR CIRCUIT SIMULATION
    ARORA, ND
    SHARMA, MS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1392 - 1398
  • [37] Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET
    Gupta, RS
    Goel, K
    Gupta, M
    Saxena, M
    High Performance Devices, Proceedings, 2005, : 52 - 59
  • [38] A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
    Shweta Tripathi
    Chinese Physics B, 2014, 23 (11) : 624 - 629
  • [39] A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
    Tripathi, Shweta
    CHINESE PHYSICS B, 2014, 23 (11)
  • [40] THE NUMERICAL SIMULATION OF TWO-DIMENSIONAL OPEN CHANNEL TURBULENCE
    Guo Qing-chao Hart Qi-wei Research Centre on Disaster and Environment
    Journal of Hydrodynamics(SerB)., 1993, (03) : 89 - 97
12345