Si(001)-2 multiplied by 1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH TEMPERATURE ANNEALING.

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作者：
Sakamoto, Tsunenori [1 ]
Hashiguchi, Gen [1 ]
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[1] Electrotechnical Lab, Niihari, Jpn, Electrotechnical Lab, Niihari, Jpn
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| 1600年 / 25期
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