Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)

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作者：
机构：
[1] Qi, Wen-Jie
[2] Li, Bing-Zong
[3] Huang, Wei-Ning
[4] Gu, Zhi G.
[5] Lu, Hong Q.
[6] Zhang, Xiang-Jiu
[7] Zhang, Ming
[8] Dong, Guo-Sheng
来源：
Qi, Wen-Jie | 1600年 / Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States卷 / 2364期
关键词：
Cobalt - Cobalt compounds - Epitaxial growth - Multilayers - Semiconducting germanium compounds - Semiconducting silicon - Spectroscopy - Titanium;
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摘要：
The interfacial reaction of bilayer Co/Ti with epitaxially grown Si 1-xGex layer with x = 0.2 was investigated in this work. The multilayer films were characterized by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The experimental results show the formation of a multi-layer of TiN(O)/CoSi2(Ge)/Si. A highly preferential orientation was observed for the formed CoSi2(Ge) layer. The resulted resistivity of Co/Ti/SiGe/Si after a high temperature annealing is close to that of typical CoSi2 film.
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