共 50 条
- [41] INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON DRAG BY PHONONS IN n-TYPE Ge.[J]. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (11): : 1402 - 1404Baranskii, P.I.Buda, I.S.Kolomoets, V.V.Samoilovich, A.G.Sus', V.A.
- [42] DEFECT STATES IN PLASTICALLY DEFORMED P-TYPE SILICON-CRYSTALS INVESTIGATED BY THE HALL-EFFECT[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4426 - 4432ONO, HSUMINO, K
- [43] Hysteresis of the variable range hopping magnetoresistance in the moderately compensated p-type Ge[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2000, 218 (01): : 165 - 168Andreev, AGChernyaev, AVEgorov, SVParfeniev, RVZabrodskii, AG
- [44] NONVERTICAL OPTICAL TRANSITIONS BETWEEN LIGHT- AND HEAVY-HOLE BANDS AND DRAG EFFECT IN SEMICONDUCTORS SUCH AS P-TYPE GE.[J]. 1982, V 16 (N 4): : 406 - 408NORMANTAS, E.
- [45] NEGATIVE MAGNETORESISTANCE OF ANISOTROPICALLY DEFORMED P-TYPE INSB AT 4.2-DEGREES-K[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 69 - 71GALAVANOV, VVPARIMBEKOV, ZA
- [46] TRANSVERSE THERMOELECTRIC EFFECTS IN UNIAXIALLY DEFORMED N-TYPE GE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (09): : 1072 - 1072PANKRATOVA, ZK
- [47] HALL EFFECT MEASUREMENT OF RADIATION EFFECT ON P-TYPE SILICON[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (10) : 725 - &TANAKA, TINUISHI, Y
- [48] EVEN HALL-EFFECT IN P-TYPE GERMANIUM[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 983 - &VASHKYAV.RDENENE, MREPSHAS, K
- [49] EVEN HALL EFFECT IN p-TYPE GERMANIUM.[J]. 1972, 6 (06): : 983 - 984Vashkyavichyus, R.Denene, M.Repshas, K.
- [50] PIEZO-HALL EFFECT IN P-TYPE GERMANIUM[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (08) : 1542 - &INOUE, MIKEDA, M