Study of electron, proton, and swift heavy ion irradiation of n -type germanium using deep level transient spectroscopy

被引：0
|
作者：
Colder, A. [1 ]
Levalois, M. [1 ]
Marie, P. [1 ]
机构：
[1] LERMAT, FRE CNRS 2149, ISMRA, 6 Boulevard Maréchal Juin, Caen Cedex,14050, France
来源：
| 1600年 / American Institute of Physics Inc.卷 / 88期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Study of intermixing and Zr-silicide formation using swift heavy ion irradiation
    Agarwal, Garima
    Kulshrestha, Vaibhav
    Dhunna, Renu
    Kabiraj, D.
    Verma, Shikha
    Jain, I. P.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (04): : 879 - 888
  • [42] Study of intermixing and Zr-silicide formation using swift heavy ion irradiation
    Garima Agarwal
    Vaibhav Kulshrestha
    Renu Dhunna
    D. Kabiraj
    Shikha Verma
    I. P. Jain
    Applied Physics A, 2010, 99 : 879 - 888
  • [43] Deep level study of Mg-doped GaN using deep level transient spectroscopy and minority carrier transient spectroscopy
    Tran Thien Duc
    Pozina, Galia
    Amano, Hiroshi
    Monemar, Bo
    Janzen, Erik
    Hemmingsson, Carl
    PHYSICAL REVIEW B, 2016, 94 (04)
  • [44] Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation
    Sorieul, S.
    Kerbiriou, X.
    Costantini, J-M
    Gosmain, L.
    Calas, G.
    Trautmann, C.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (12)
  • [45] Study on effects of swift heavy ion irradiation in cerium dioxide using synchrotron radiation X-ray absorption spectroscopy
    Ohno, H.
    Iwase, A.
    Matsumura, D.
    Nishihata, Y.
    Mizuki, J.
    Ishikawa, N.
    Baba, Y.
    Hirao, N.
    Sonoda, T.
    Kinoshita, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13): : 3013 - 3017
  • [46] Electron-irradiation-induced deep level in n-type GaN
    Fang, ZQ
    Hemsky, JW
    Look, DC
    Mack, MP
    APPLIED PHYSICS LETTERS, 1998, 72 (04) : 448 - 449
  • [47] Electron-irradiation-induced deep level in n-type GaN
    Fang, Z.-Q.
    Hemsky, J.W.
    Look, D.C.
    Mack, M.P.
    1998, (72)
  • [48] Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon
    Schmidt, DC
    Svensson, BG
    Seibt, M
    Jagadish, C
    Davies, G
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2309 - 2317
  • [49] A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
    Lourenço, MA
    Knights, AP
    Homewood, KP
    Gwilliam, RM
    Simpson, PJ
    Mascher, P
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 300 - 304
  • [50] COMPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    TOKUDA, Y
    USAMI, A
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (03) : 3564 - 3568
12345