Microwave semiconductor devices

被引：0

作者：

Ohta, Kiyofumi ^{[1
]}

Yano, Kenji ^{[1
]}

Hirano, Yutaka ^{[1
]}

机构：

[1] Fujitsu Ltd, Japan

来源：

Fujitsu Scientific and Technical Journal | 1988年 / 24卷 / 04期

关键词：

Semiconducting Gallium Arsenide - Transistors; Field Effect;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This report describes the state-of-the-art microwave semiconductors. The important parameters of GaAs power FETs are efficiency, linearity and reliability. The design philosophy for these parameters and performance are discussed. Low noise performance of HEMTs has been demonstrated and a new 1/4 μm gate HEMT has been developed having a 0.58 db noise figure and 12.35 db of associated gain at 12 GHz. MMICs have high potential for wideband, small size, and lightweight equipment. GaAs FET modules and amplifiers are described as examples of applications.

引用

页码：359 / 371

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