PROFILE OF THE ABSORPTION EDGE OF VARIABLE-GAP STRUCTURES MADE OF III-V SEMICONDUCTOR COMPOUNDS.

被引：0
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作者：
Morozov, B.V.
Bolkhovityanov, Yu.B.
Gabaraev, R.S.
Kravchenko, A.F.
Yudaev, V.I.
机构：
来源：
Soviet physics. Semiconductors | 1980年 / 14卷 / 08期
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摘要：
SEMICONDUCTOR DEVICES
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页码：883 / 886
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