Thin-base InGaAs heterojunction bipolar transistor with parabolically graded InGaAlAs emitter

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[1] Koch, Steffen
[2] Waho, Takao
[3] Kobayashi, Takashi
[4] Ishibashi, Tadao
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Koch, Steffen | 1600年 / 32期
关键词：
Heterojunction bipolar transistors - Indium gallium aluminum arsenide emitter - Indium gallium arsenide - Parabolic grading - Thin base - Velocity overshoot;
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