RADIATION HARDENED SILICON DEVICES USING A NOVEL THICK OXIDE.

被引：0

作者：

Watanabe, Kikuo ^{[1
]}

Kato, Masataka ^{[1
]}

Okabe, Takahiro ^{[1
]}

Nagata, Minoru ^{[1
]}

机构：

[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn

来源：

IEEE Transactions on Nuclear Science | 1985年 / NS-32卷 / 06期

关键词：

FILMS - Dielectric - SEMICONDUCTING SILICON - TRANSISTORS; BIPOLAR;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A radiation-hardened thick-oxide technology is proposed. It utilizes a double layer consisting of a thick chemically deposited SiO//2 layer over a thin thermal SiO//2 layer. In npn transistors, a 1. 5 order of magnitude improvement in radiation tolerance is observed when this technology is combined with the use of a highly doped Si surface layer.

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