RECOVERY AND RECRYSTALLIZATION IN THIN EVAPORATED SILVER FILMS.

被引：0
|
作者：
HENNING, DIETMAR
WEIL, KONRAD G.
WILL, GERHARD
机构：
来源：
| 1982年 / V 73卷 / N 9期
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：596 / 600
相关论文
共 50 条
  • [31] MECHANISM OF HUMIDITY-SENSITIVE SWITCHING IN ELECTROFORMED SILVER THIN FILMS.
    Tanaka, Koji
    Electronics & communications in Japan, 1984, 67 (01): : 68 - 76
  • [32] INFLUENCE OF DEPOSITION TEMPERATURE ON THE CRYSTALLINE AND ELECTRICAL PROPERTIES OF THIN SILVER FILMS.
    Schlemminger, W.
    Stark, D.
    Thin Solid Films, 1986, 137 (01): : 49 - 57
  • [33] INFRARED SPECTROSCOPIC STUDY OF VACUUM-EVAPORATED SiO-CeO2 THIN FILMS.
    Singh, A.
    Hogarth, C.A.
    Journal of Materials Science, 1988, 23 (03): : 1090 - 1097
  • [34] Effect of substrate temperature on the electrical and optical properties of reactively evaporated tin oxide thin films.
    Raghupathi, PS
    George, J
    Menon, CS
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2005, 43 (08) : 620 - 623
  • [35] Diffusion processes on thin metal films. Migration of single silver adatoms on silver (111) - terraces
    Krueger, K.D.
    Stark, D.
    Vide, les Couches Minces, 1991, (259 Supp):
  • [36] HETEROGENEITY OF EVAPORATED As2S3 FILMS.
    Cimpl, Z.
    Kosek, F.
    Janos, J.
    Mikhailov, M.
    Physica Status Solidi (A) Applied Research, 1985, 88 (02):
  • [37] ADSORPTION, DECOMPOSITION, AND REACTION OF ACETYLENE ON EVAPORATED IRON FILMS.
    Borgmann, D.
    Behner, H.
    Pirner, M.
    Wedler, G.
    1600, (02):
  • [38] ATTENUATION OF HYPERSOUND AT 35 GHz IN EVAPORATED Ag FILMS.
    Pietzschmann, U.
    Bialas, H.
    1600, (16):
  • [39] The structure of thin films. Part VIII. Expanded films.
    Adam, NK
    Jessop, G
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1926, 112 (761) : 362 - 375
  • [40] STUDIES ON THE STRUCTURE AND BEHAVIOR OF THIN EVAPORATED FILMS OF SILVER, ALUMINUM, SILICON, AND GERMANIUM
    HASS, G
    PHYSICAL REVIEW, 1947, 72 (02): : 174 - 174
12345