Analytic model for C-V characteristics of planar Schottky diode

被引：0
|
作者：
Tian, Tong [1 ]
Sun, Xiaowei [1 ]
Luo, Jinsheng [1 ]
Lin, Jinting [1 ]
机构：
[1] Xi'an Jiaotong Univ, Xi'an, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 1997年 / 25卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：75 / 78
相关论文
共 50 条
  • [31] THE INFLUENCE OF THE DX CENTER C-V AND IV CHARACTERISTICS OF SCHOTTKY BARRIERS IN N-TYPE ALGAAS
    GHEZZI, C
    GOMBIA, E
    MOSCA, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10B) : B31 - B33
  • [32] On the C-V characteristics of the MFS and MFOS structures
    Huazhong Ligong Daxue Xuebao, 1 (79):
  • [33] Dynamic C-V characteristics of MOS structures
    Sakalauskas, S.
    Vaitonis, Z.
    LITHUANIAN JOURNAL OF PHYSICS, 2007, 47 (04): : 451 - 456
  • [34] C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN UNDOPED SEMIINSULATING GAAS
    DUBECKY, F
    DARMO, J
    BETKO, J
    MOZOLOVA, Z
    PELFER, PG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1654 - 1658
  • [35] C-V ANALYSIS OF SCHOTTKY BARRIERS IN PRESENCE OF A SERIES BULK RESISTANCE
    SHAW, RF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (10): : 1118 - 1118
  • [36] Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures
    Catir, Fulya Esra Cimilli
    Saglam, Mustafa
    MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 6979 - 6985
  • [37] Extraction of device model parameters in MOSFETs by combining C-V and I-V characteristics
    Kim, YC
    Kim, HT
    Cho, SD
    Song, SJ
    Chi, SS
    Kim, HC
    Kim, SK
    Baek, KH
    Lim, GM
    Kim, DJ
    Kim, DM
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 40 (01) : 60 - 63
  • [38] AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
    Benhaliliba, M.
    Ocak, Y. S.
    Mokhtari, H.
    Kilicoglu, T.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (02)
  • [39] A model for the C-V characteristics of the metal-ferroelectric-insulator-semiconductor structure
    Zhang, Jun Jie
    Sun, Jing
    Zheng, Xue Jun
    SOLID-STATE ELECTRONICS, 2009, 53 (02) : 170 - 175
  • [40] EFFECT OF HIGH ELECTRIC-FIELD PULSE ON C-V CHARACTERISTICS OF ANODIZED INSB MOS DIODE
    IMAMURA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 571 - 572
12345