Compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy

被引：0
|
作者：
Reuter, D.
Wieck, A.D.
Fischer, A.
机构：
来源：
Review of Scientific Instruments | 1999年 / 70卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth of carbon nanotubes by gas source molecular beam epitaxy
    Wan, J
    Luo, YH
    Choi, SD
    Li, RG
    Jin, G
    Liu, JL
    Wang, KL
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1973 - 1976
  • [32] Carbon nanotubes grown by gas source molecular beam epitaxy
    Wan, J
    Luo, YH
    Liu, JL
    Li, RG
    Jin, G
    Choi, SD
    Wang, KL
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 820 - 824
  • [33] Carbon δ-doping in GaAs by metal-organic molecular beam epitaxy
    Yamada, Takumi
    Shirahama, Masanori
    Tokumitsu, Eisuke
    Konagai, Makoto
    Takahashi, Kivoshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (8 B):
  • [34] Gas source molecular beam epitaxy
    Panish, M.B.
    Temkin, H.
    Wolf, B.
    Crystal Research and Technology, 1994, 29 (05)
  • [35] PUMPING REQUIREMENTS AND OPTIONS FOR MOLECULAR-BEAM EPITAXY AND GAS SOURCE MOLECULAR-BEAM EPITAXY CHEMICAL BEAM EPITAXY
    MCCOLLUM, MJ
    PLANO, MA
    HAASE, MA
    ROBBINS, VM
    JACKSON, SL
    CHENG, KY
    STILLMAN, GE
    FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 132 - 136
  • [36] Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxy
    Cheah, WK
    Fan, WJ
    Yoon, SF
    Liu, R
    Wee, ATS
    JOURNAL OF CRYSTAL GROWTH, 2004, 267 (1-2) : 364 - 371
  • [37] CARBON CLUSTERS IN AN ELECTRON-BEAM EVAPORATOR
    MARTELLI, S
    URBAN, J
    TESCHE, B
    THIN SOLID FILMS, 1983, 105 (01) : 49 - 60
  • [38] DOPING OF ZNTE BY MOLECULAR-BEAM EPITAXY
    TAO, IW
    JURKOVIC, M
    WANG, WI
    APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1848 - 1849
  • [39] Mg doping of GaN by molecular beam epitaxy
    Lieten, R. R.
    Motsnyi, V.
    Zhang, L.
    Cheng, K.
    Leys, M.
    Degroote, S.
    Buchowicz, G.
    Dubon, O.
    Borghs, G.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (13)
  • [40] Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
    Kern, RS
    Davis, RF
    APPLIED PHYSICS LETTERS, 1997, 71 (10) : 1356 - 1358
12345