Compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy

被引：0
|
作者：
Reuter, D.
Wieck, A.D.
Fischer, A.
机构：
来源：
Review of Scientific Instruments | 1999年 / 70卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy
    Reuter, D
    Wieck, AD
    Fischer, A
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (08): : 3435 - 3438
  • [2] Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
    Huang, QF
    Yoon, SF
    Tan, KH
    Sun, ZZ
    Zhang, R
    Jiang, J
    Lee, LH
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 37 - 43
  • [3] ELECTRON-BEAM-HEATED SOLID SOURCE FOR CARBON DOPING IN GAAS AND ALGAAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
    WALKER, JF
    SORBA, L
    DEFRANCESCHI, S
    BELTRAM, F
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 287 - 289
  • [4] CARBON DOPING BY A COMPACT ELECTRON-BEAM SOURCE
    VANHOVE, JM
    CHOW, PP
    ROSAMOND, MF
    CARPENTER, GL
    CHOW, LA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1200 - 1202
  • [5] Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy
    Salokatve, A
    Toivonen, M
    Asonen, H
    Pessa, M
    Likonen, J
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 86 - 88
  • [6] CARBON DOPING OF INGAAS IN SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE
    HWANG, WY
    MILLER, DL
    CHEN, YK
    HUMPHREY, DA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1193 - 1196
  • [7] CARBON DOPING OF GAAS AND (IN,GA)AS IN SOLID SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE
    ZHANG, K
    HWANG, WY
    MILLER, DL
    KAPITAN, LW
    APPLIED PHYSICS LETTERS, 1993, 63 (17) : 2399 - 2401
  • [8] HEAVY CARBON DOPING OF GAAS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    FISCHER, A
    LANGE, C
    PLOOG, K
    TAPFER, L
    APPLIED PHYSICS LETTERS, 1992, 61 (02) : 183 - 185
  • [9] ELECTRON-BEAM EVAPORATOR OF SILICON AND GERMANIUM FOR MOLECULAR-BEAM EPITAXY
    SAMBURSKII, EA
    BASMANOV, LI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1988, 31 (04) : 1055 - 1057
  • [10] Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
    Rossner, U
    BrunLeCunff, D
    Barski, A
    Daudin, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2655 - 2658
12345