Preparation of (Pb, La) (Zr, Ti)O3 ferroelectric films by RF sputtering on large substrate

被引：0

作者：

Suu, K. ^{[1
]}

Osawa, A. ^{[1
]}

Tani, N. ^{[1
]}

Ishikawa, M. ^{[1
]}

Nakamura, K. ^{[1
]}

Ozawa, T. ^{[1
]}

Sameshima, K. ^{[1
]}

Kamisawa, A. ^{[1
]}

Takasu, H. ^{[1
]}

机构：

[1] Inst for Super Materials, Chiba, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 9 B期

关键词：

Theoretical; (THR); -; Experimental; (EXP);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(Pb, La)(Zr, Ti)O3 (PLZT) thin films were deposited on 6-inch Pt/Ti/SiO2/Si substrates by rf magnetron sputtering using a multichamber production system. The Pb content in PLZT films deposited at low temperature was measured by inductively coupled plasma (ICP) spectroscopy, and the structural properties of crystallized PLZT films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). A novel method for Pb content control was developed and it was found that Pb content in PLZT film could be changed by changing the electric potential of the substrate. For ferroelectric properties, only small differences were observed between the rapid thermally annealed PLZT film and furnace-annealed ones. Good uniformities of film thickness, Pb content and remanent polarization were achieved on 6-inch wafers.

引用

页码：4967 / 4971

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