7.4 to 8.4 GHz high efficiency PHEMT three-stage power amplifier

被引：0
|
作者：
Chu, S.L.G. [1 ]
Platzker, A. [1 ]
Borkowski, M. [1 ]
Mallavarpu, R. [1 ]
Snow, M. [1 ]
Bowlby, A. [1 ]
Teeter, D. [1 ]
Kazior, T. [1 ]
Alavi, K. [1 ]
机构：
[1] Advanced Device Cent, Andover, United States
来源：
IEEE MTT-S International Microwave Symposium Digest | 2000年 / 2卷
关键词：
Capacitance - Capacitors - Electric potential - Electric resistance - Gain measurement - Gates (transistor) - High electron mobility transistors - Integrated circuit layout - Mathematical models - Monolithic microwave integrated circuits - Resistors - Semiconducting gallium arsenide;
D O I：
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中图分类号：
学科分类号：
摘要：
This paper describes the design, fabrication, and performance of a 7.4 GHz to 8.4 GHz 3-stage PHEMT power amplifier. To the best of our knowledge, this amplifier has achieved the highest efficiency, power, and gain ever for a three-stage power amplifier at X band. At a drain voltage of 6 volts, measured power added efficiency was between 50% to 60% with a CW power output of 35 dBm and an associated gain of 24 dB. The amplifier was stable over all measured biases and all drive levels.
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页码：947 / 950
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