7.4 to 8.4 GHz high efficiency PHEMT three-stage power amplifier

被引：0

作者：

Chu, S.L.G. ^{[1
]}

Platzker, A. ^{[1
]}

Borkowski, M. ^{[1
]}

Mallavarpu, R. ^{[1
]}

Snow, M. ^{[1
]}

Bowlby, A. ^{[1
]}

Teeter, D. ^{[1
]}

Kazior, T. ^{[1
]}

Alavi, K. ^{[1
]}

机构：

[1] Advanced Device Cent, Andover, United States

来源：

IEEE MTT-S International Microwave Symposium Digest | 2000年 / 2卷

关键词：

Capacitance - Capacitors - Electric potential - Electric resistance - Gain measurement - Gates (transistor) - High electron mobility transistors - Integrated circuit layout - Mathematical models - Monolithic microwave integrated circuits - Resistors - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper describes the design, fabrication, and performance of a 7.4 GHz to 8.4 GHz 3-stage PHEMT power amplifier. To the best of our knowledge, this amplifier has achieved the highest efficiency, power, and gain ever for a three-stage power amplifier at X band. At a drain voltage of 6 volts, measured power added efficiency was between 50% to 60% with a CW power output of 35 dBm and an associated gain of 24 dB. The amplifier was stable over all measured biases and all drive levels.

引用

页码：947 / 950

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