共 50 条
- [41] THE PRESENCE OF INTERSTITIAL METAL ATOMS AT SILICON-METAL INTERFACES AND THEIR POSSIBLE IMPLICATION FOR FORMATION OF SCHOTTKY-BARRIER HEIGHT BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 285 - 285
- [43] Analysis of the temperature-dependent current-voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (08): : 1575 - 1578
- [44] Adhesion and progressive debonding of polymer/metal interfaces: Effects of temperature and environment MATERIALS RELIABILITY IN MICROELECTRONICS IX, 1999, 563 : 263 - 268
- [45] Barrier height formation in organic blends/metal interfaces: Case of tetrathiafulvalene-tetracyanoquinodimethane/Au(111) JOURNAL OF CHEMICAL PHYSICS, 2013, 139 (21):
- [47] Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements 1600, American Institute of Physics Inc. (91):
- [49] A dynamic probe of tribological processes at metal/polymer interfaces: Transient current generation ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 321 - PMSE