AlGaN/GaN heterostructure field effect transistors

被引：0
|
作者：
Maeda, N.
Saitoh, T.
Tsubaki, K.
机构：
来源：
NTT R and D | 2001年 / 50卷 / 01期
关键词：
Hetrostructure field effect transistors (FETs);
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摘要：
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页码：8 / 17
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