Study of a quantitative microanalysis using secondary ion emission, (Etude de la microanalyse quantitative par emission ionique secondaire)

被引：0

作者：

CROSET M

机构：

来源：

| 1971年 / 3卷 / 01期

关键词：

SEMICONDUCTORS; Impurities - SPECTROSCOPIC ANALYSIS; Emission Spectra;

D O I：

暂无

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学科分类号：

摘要：

A method of quantitative microanalysis is described. The principle consists of spectrographic analysis of secondary emitted ions from the substrate, which has been bombarded by primary ions. The method has been used for identifying boron distribution in silicon.

引用

页码：19 / 36

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