Temperature effects on heavily doped polycrystalline silicon

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| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期

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[1] TEMPERATURE EFFECTS ON HEAVILY-DOPED POLYCRYSTALLINE SILICON
DEEN, MJ
NAEM, AA
CHEE, LY
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5253 - 5259
[2] ON THE TEMPERATURE CHARACTERISTICS OF HEAVILY DOPED POLYCRYSTALLINE SILICON FILMS
CRESSLER, JD
HWANG, W
CHEN, TC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C426 - C426
[3] Single-electron effects in heavily doped polycrystalline silicon nanowires
Appl Phys Lett, 8 (1113):
[4] Single-electron effects in heavily doped polycrystalline silicon nanowires
Irvine, AC
Durrani, ZAK
Ahmed, H
Biesemans, S
APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1113 - 1115
[5] Raman spectroscopy of heavily doped polycrystalline and microcrystalline silicon
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Brehme, S
Brendel, K
Genzel, C
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PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235 (01): : 170 - 178
[6] RESISTIVITY LOWERING LIMITATIONS OF HEAVILY DOPED POLYCRYSTALLINE SILICON
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NISHIMATSU, S
DENKI KAGAKU, 1979, 47 (02): : 118 - 123
[7] ELECTRICAL TRIMMING OF HEAVILY DOPED POLYCRYSTALLINE SILICON RESISTORS
AMEMIYA, Y
ONO, T
KATO, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1738 - 1742
[8] CW LASER TRIMMING PHENOMENON OF HEAVILY DOPED POLYCRYSTALLINE SILICON
MATSUMOTO, S
GIBBONS, JF
MAGEE, TJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C102 - C102
[9] Resistivity of heavily doped polycrystalline silicon subjected to furnace annealing
Suzuki, Kunihiro
Miyata, Noriyuki
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Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 A): : 1748 - 1752
[10] Pd/Ti bilayer contacts to heavily doped polycrystalline silicon
1600, (72):

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