Single-electron effects in heavily doped polycrystalline silicon nanowires

被引:0
|
作者
机构
来源
Appl Phys Lett | / 8卷 / 1113期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Single-electron effects in heavily doped polycrystalline silicon nanowires
    Irvine, AC
    Durrani, ZAK
    Ahmed, H
    Biesemans, S
    APPLIED PHYSICS LETTERS, 1998, 73 (08) : 1113 - 1115
  • [2] Single-electron effects in highly doped polysilicon nanowires
    Tilke, A
    Blick, RH
    Lorenz, H
    Kotthaus, JP
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 15 (02): : 60 - 64
  • [3] Temperature effects on heavily doped polycrystalline silicon
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [4] Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires
    Kim, JR
    Kim, BK
    Lee, IJ
    Kim, JJ
    Kim, J
    Lyu, SC
    Lee, CJ
    PHYSICAL REVIEW B, 2004, 69 (23) : 233303 - 1
  • [5] TEMPERATURE EFFECTS ON HEAVILY-DOPED POLYCRYSTALLINE SILICON
    DEEN, MJ
    NAEM, AA
    CHEE, LY
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) : 5253 - 5259
  • [6] Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration
    Tilke, A
    Blick, RH
    Lorenz, H
    Kotthaus, JP
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) : 8159 - 8162
  • [7] Single-electron tunneling through a heavily doped GaAs quantum dot
    Son, SH
    Choi, BH
    Cho, KH
    Hwang, SW
    Park, YM
    Park, YJ
    Kim, EK
    Ahn, D
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 953 - 955
  • [8] Single-electron charging in doped silicon double dots
    Single, C
    Augke, R
    Prins, FE
    Wharam, DA
    Kern, DP
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1165 - 1168
  • [9] Silicon single-electron transistors and single-electron CCD
    Takahashi, Y
    Fujiwara, A
    Ono, Y
    Inokawa, H
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 181 - 191
  • [10] Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects
    Tan, YT
    Durrani, ZAK
    Ahmed, H
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1262 - 1270