Nucleation and growth morphology in heteroepitaxy of CaF2 on Si(111): a study with scanning tunneling microscopy

被引：0
|
作者：
机构：
[1] Sumiya, Touru
[2] Miura, Tadao
[3] Tanaka, Shun-ichiro
来源：
Sumiya, Touru | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth and microstructure of Si/CaF2/Si(111) heterostructures
    Gribelyuk, MA
    Wilk, GD
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 441 - 442
  • [32] KINETIC INSTABILITY IN THE GROWTH OF CAF2 ON SI(111)
    TROMP, RM
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1994, 73 (01) : 110 - 113
  • [33] Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1°-off substrate
    Watanabe, M
    Iketani, Y
    Asada, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A): : L964 - L967
  • [34] Annealing of CaF2 adlayers grown on Si(111):: investigations of the morphology by atomic force microscopy
    Wollschläger, J
    Pietsch, H
    Kayser, R
    Klust, A
    THIN SOLID FILMS, 1998, 336 (1-2) : 120 - 123
  • [35] Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature
    Yakimov, AI
    Derjabin, AS
    Sokolov, LV
    Pchelyakov, OP
    Dvurechenskii, AV
    Moiseeva, MM
    Sokolov, NS
    APPLIED PHYSICS LETTERS, 2002, 81 (03) : 499 - 501
  • [36] Annealing of CaF2 adlayers grown on Si(111):: investigations of the morphology by atomic force microscopy
    Wollschläger, J
    Pietsch, H
    Kayser, R
    Klust, A
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 120 - 123
  • [37] Heteroepitaxy of GaAs on CaF2/Si(111) by surface free energy modulation method
    Kawasaki, K
    Tsutsui, K
    III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 51 - 56
  • [38] Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
    Watanabe, Masahiro
    Maeda, Yasuhisa
    Okano, Shun-ichi
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (6 A):
  • [39] Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
    Watanabe, M
    Maeda, Y
    Okano, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (6A): : L500 - L502
  • [40] Study of initial growth layer of GaSb on Si(111) by scanning tunneling microscopy
    Hara, Shinsuke
    Fuse, Kazuhiro
    Machida, Ryuto
    Yagishita, Kazuki
    Irokawa, Katsumi
    Miki, Hirofumi
    Kawazu, Akira
    Fujishiro, Hiroki I.
    Japanese Journal of Applied Physics, 2011, 50 (8 PART 4)
12345