HIGH-EFFICIENCY STRIPE-GEOMETRY InGaAsP DH LASERS ( lambda equals 1. 3 mu m) WITH CHEMICALLY-ETCHED MIRRORS.

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作者：
Wright, P.D.
Nelson, R.J.
机构：
来源：
Electron device letters | 1980年 / EDL-1卷 / 11期
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Compendex;
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摘要：
Lasers, Semiconductor
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页码：242 / 243
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