Flux Performance Improvement of Mirrors of High Reflection Factor for lambda equals 1. 06 mu m.

被引：0

作者：

Geenen, B. ^{[1
]}

Malherbes, A. ^{[1
]}

Guerain, J. ^{[1
]}

Boisgard, D. ^{[1
]}

Friart, D. ^{[1
]}

Garaude, F. ^{[1
]}

机构：

[1] MATRA, Fr, MATRA, Fr

来源：

Vide, les Couches Minces | 1983年 / 39卷 / 223期

关键词：

FILMS - Growing - MASS SPECTROMETERS - Data Recording - OPTICAL COATINGS - Thin Films - PYROMETERS - VACUUM TECHNOLOGY - Measurements;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In the evaporation chamber the parameters such as vacuum, regulation of oxygen, evaporation and substrate temperature are better controlled in order to change the processing operations. A mass spectrometer is coupled to the evaporation chamber for vacuum and oxygen pressure controls; pyrometric observation is used for temperature measurements. These different measurement controls and processing operations resulted in an increase of damage threshold of high reflectivity mirrors from 3. 5 J/cm**2 to 8 J/cm**2.

引用

页码：369 / 373

共 17 条

[1] IMPROVEMENT OF FLUX CONTENT OF MIRRORS WITH A HIGH REFLECTION FACTOR FOR LAMBDA =1.06-MU-M
GEENEN, B
MALHERBES, A
GUERAIN, J
BOISGARD, D
FRIART, D
GARAUDE, F
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1984, 39 (223): : 369 - 373
[2] ELECTRO-OPTICAL SERRODYNE FREQUENCY TRANSLATOR FOR lambda equals 1. 3 mu M.
Thylen, L.
Lindqvist, G.E.
IEE Proceedings, Part J: Optoelectronics, 1985, 132 (02): : 119 - 121
[3] CHANGE OF MAGNETIC RESONANCE PARAMETERS IN FeBO3:NiO INDUCED BY RADIATION ( lambda equals 1. 06 mu m).
Petrakovskii, G.A.
Patrin, G.S.
Volkov, N.V.
Physica Status Solidi (A) Applied Research, 1985, 87 (02):
[4] HIGH-SPEED InGaAsP/InP DH LED ( lambda equals 1. 3 mu m).
Okuda, Hiroshi
Yamazoe, Yoshimitsu
Yamabayashi, Naoyuki
Himoto, Takeshi
Iguchi, Sin-ichi
Sumitomo Electric Technical Review, 1986, (25): : 81 - 88
[5] ALL-SILICON ACTIVE AND PASSIVE GUIDED-WAVE COMPONENTS FOR lambda equals 1. 3 AND 1. 6 mu M.
Soref, Richard A.
Lorenzo, Joseph P.
IEEE Journal of Quantum Electronics, 1986, QE-22 (06) : 873 - 879
[6] Investigations at Optical Receivers in the Wave Band lambda 1. 0 mu m to 1. 3 mu m.
Konstroffer, L.
Grimm, E.
Nachrichtentechnik, Elektronik, 1981, 31 (03): : 107 - 108
[7] HIGH-EFFICIENCY STRIPE-GEOMETRY InGaAsP DH LASERS ( lambda equals 1. 3 mu m) WITH CHEMICALLY-ETCHED MIRRORS.
Wright, P.D.
Nelson, R.J.
Electron device letters, 1980, EDL-1 (11): : 242 - 243
[8] POLARIZATION OF lambda equals 1. 55 mu m InGaAsP RIDGE-WAVEGUIDE LASERS.
Hartl, Engelbert
Amann, Markus-Christian
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (01): : 104 - 106
[9] Interband Absorption Induced in Silicon under Strong Picosecond Excitation at 1. 06 mu m.
Pugnet, M.
Amand, T.
Cornet, A.
Brousseau, M.
Physica Status Solidi (B) Basic Research, 1985, 127 (02): : 621 - 631
[10] PERFORMANCE EVALUATION OF WAVEGUIDE PHASE MODULATORS FOR COHERENT SYSTEMS AT 1. 3 AND 1. 5 mu M.
Tench, R.E.
Delavaux, Jean-Marc P.
Tzeng, L.D.
Smith, R.W.
Buhl, Lawrence L.
Alferness, Rod C.
Journal of Lightwave Technology, 1987, LT-5 (04) : 492 - 501

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