Mechanism of cleaning and etching Si surfaces with low energy chlorine ion bombardment

被引：0
|
作者：
机构：
来源：
| 1600年 / 75期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] MECHANISM OF CLEANING AND ETCHING SI SURFACES WITH LOW-ENERGY CHLORINE ION-BOMBARDMENT
    BELLO, I
    CHANG, WH
    LAU, WM
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 3092 - 3097
  • [2] LOW-ENERGY ION-BOMBARDMENT ON SI SURFACES
    MURAKAMI, J
    HASHIMOTO, T
    KUSUNOKI, I
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 117 (1-3): : 243 - 244
  • [3] Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces
    Lee, SM
    Fell, CJ
    Marton, D
    Rabalais, JW
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5217 - 5223
  • [4] Synergetic effects in annealing and low energy ion bombardment of Si(100) surfaces
    J Appl Phys, 10 (5217):
  • [5] Mechanism of etching and surface relief development of PMMA under low-energy ion bombardment
    Koval, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 843 - 851
  • [6] Oxidation of nickel surfaces by low energy ion bombardment
    Saric, Iva
    Peter, Robert
    Kavre, Ivna
    Badovinac, Ivana Jelovica
    Petravic, Mladen
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 371 : 286 - 289
  • [7] LOW-ENERGY AR ION-BOMBARDMENT DAMAGE OF SI, GAAS, AND INP SURFACES
    WILLIAMS, RS
    SOLID STATE COMMUNICATIONS, 1982, 41 (02) : 153 - 156
  • [8] ION-BOMBARDMENT CLEANING OF LIQUID GALLIUM SURFACES
    FINE, J
    HARDY, SC
    ANDREADIS, TD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 1310 - 1311
  • [9] Low-energy Ar ion-induced and chlorine ion etching of silicon
    Balooch, M
    Moalem, M
    Wang, WE
    Hamza, AV
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (01): : 229 - 233
  • [10] Low-energy Ar ion-induced and chlorine ion etching of silicon
    J Vac Sci Technol A, 1 (229):
12345