DRAM manufacturing in the '90s. Part 1. The history lesson

被引：0

作者：

Larrabee, Graydon ^{[1
]}

Chatterjee, Pallab ^{[1
]}

机构：

[1] Texas Instruments, Dallas, United States

来源：

Semiconductor International | 1991年 / 14卷 / 06期

关键词：

Data Storage; Semiconductor;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We've seen the semiconductor industry propelled by the scaling of feature sizes. Further, dynamic random access memory (DRAM) has heralded every new generation of scaled technology; DRAM plays the unique role of 'technology driver.' Technology issues associated with DRAM manufacturing ripple through all device technologies in the same generation. This takes place because the DRAM device is the most demanding to manufacture. DRAM market introduction and Productization timing are discussed.

引用

页码：84 / 87

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