Interaction of oxygen with threading dislocations in GaN

被引:0
|
作者
Jones, R. [1 ]
Elsner, J. [1 ]
Haugk, M. [1 ]
Gutierrez, R. [1 ]
Frauenheim, Th. [1 ]
Heggie, M.I. [1 ]
Oberg, S. [1 ]
Briddon, P.R. [1 ]
机构
[1] Univ of Exeter, Exeter, United Kingdom
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
30
引用
收藏
页码:167 / 173
相关论文
共 50 条
  • [41] Structure and stability of threading edge and screw dislocations in bulk GaN
    Groeger, Roman
    Leconte, Lucien
    Ostapovets, Andriy
    COMPUTATIONAL MATERIALS SCIENCE, 2015, 99 : 195 - 202
  • [42] The role of threading dislocations in the physical properties of GaN and its alloys
    Speck, JS
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 769 - 778
  • [43] Atomic structure and energy of threading screw dislocations in wurtzite GaN
    Belabbas, I
    Belkhir, MA
    Lee, YH
    Béré, A
    Ruterana, P
    Chen, J
    Nouet, G
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2492 - 2495
  • [44] Detection of edge component of threading dislocations in GaN by Raman spectroscopy
    Kokubo, Nobuhiko
    Tsunooka, Yosuke
    Fujie, Fumihiro
    Ohara, Junji
    Hara, Kazukuni
    Onda, Shoichi
    Yamada, Hisashi
    Shimizu, Mitsuaki
    Harada, Shunta
    Tagawa, Miho
    Ujihara, Toru
    APPLIED PHYSICS EXPRESS, 2018, 11 (06)
  • [45] Oxygen segregation to dislocations in GaN
    Hawkridge, ME
    Cherns, D
    APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
  • [46] Interaction of threading and misfit dislocations in a strained epitaxial layer
    Schwarz, KW
    Tersoff, J
    APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1220 - 1222
  • [47] Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
    Lee, SR
    West, AM
    Allerman, AA
    Waldrip, KE
    Follstaedt, DM
    Provencio, PP
    Koleske, DD
    Abernathy, CR
    APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [48] Preferential nucleation of GaN quantum dots at the edge of AIN threading dislocations
    Dept. Rech. Fond. Sur Matiere Cond., CEA-Grenoble, SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    Appl Phys Lett, 17 (2632-2634):
  • [49] Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities
    Puchtler, Tim J.
    Woolf, Alexander
    Zhu, Tongtong
    Gache, David
    Hu, Evelyn L.
    Oliver, Rachel A.
    ACS PHOTONICS, 2015, 2 (01): : 137 - 143
  • [50] Effect of threading dislocations on carrier mobility in AlGaN/GaN quantum wells
    Carosella, F.
    Farvacque, J-L
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (32)