Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation

被引:0
|
作者
Chen, Peng-Shiu [1 ]
Hsieh, T.E. [1 ]
Chu, Chih-Hsun [2 ]
机构
[1] Dept. of Mat. Sci. and Engineering, National Chiao Tung University, Hsinchu, Taiwan
[2] United Silicon Inc., Hisnchu Sci.-based Industrial Park, Hsinchu, Taiwan
来源
Thin Solid Films | 1999年 / 353卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:274 / 282
相关论文
共 50 条
  • [1] Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation
    Chen, PS
    Hsieh, TE
    Chu, CH
    THIN SOLID FILMS, 1999, 353 (1-2) : 274 - 282
  • [2] Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition
    Furukawa, Taisuke
    Nakahata, Takumi
    Maruno, Shigemitsu
    Tokuda, Yasunori
    Satoh, Shinichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (9 A): : 5046 - 5047
  • [3] Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition
    Furukawa, T
    Nakahata, T
    Maruno, S
    Tokuda, Y
    Satoh, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A): : 5046 - 5047
  • [4] Kinetics of solid phase epitaxy of amorphous Si induced by self-ion implantation into Si with nanocavities
    Zhu, Xianfang
    2006 1ST IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1-3, 2006, : 470 - 474
  • [5] Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy
    Liu, Xue-Qin
    Wang, Yin-Yue
    Zhen, Cong-Mian
    Zhang, Jing
    Yang, Ying-Hu
    Guo, Yong-Ping
    Wuli Xuebao/Acta Physica Sinica, 2002, 51 (10):
  • [6] Preparation of Si1-x-yGexCy semiconductor films on Si by ion implantation and solid phase epitaxy
    Lu, XQ
    Wang, YY
    Zhen, CM
    Zhang, J
    Yang, YH
    Guo, YP
    ACTA PHYSICA SINICA, 2002, 51 (10) : 2340 - 2343
  • [7] Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon-Germanium Films
    Tada, Munehiro
    Park, Jin-Hong
    Jain, Jinendra Raja
    Saraswat, Krishna C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (01) : D23 - D27
  • [8] Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy
    Strane, JW
    Lee, SR
    Stein, HJ
    Picraux, ST
    Watanabe, JK
    Mayer, JW
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 637 - 646
  • [9] ION-IMPLANTATION-INDUCED FLUORINE AGGLOMERATION IN TUNGSTEN DISILICIDE PREPARED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    PETERSSON, CS
    WHITLOW, HJ
    KEINONEN, J
    DHEURLE, FM
    LEGOUES, FK
    JOSHI, RV
    SCILLA, G
    THOMAS, O
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 : 595 - 598
  • [10] Electrical properties of Si1-x-yGexCy films grown by ion implantation and solid phase epitaxy
    Liu, XQ
    Zhen, CM
    Wang, YY
    Zhang, J
    Pu, YJ
    Guo, YP
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4234 - 4237