Resonant-tunneling bipolar transistors with a quantum-well base

被引：0

作者：

Ryzhii, Victor ^{[1
]}

Khmyrova, Irina ^{[1
]}

Ryzhii, Maxim ^{[1
]}

Willander, Magnus ^{[1
]}

机构：

[1] Univ of Aizu, Aizu-Wakamatsu, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：5280 / 5283

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