Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

被引：0
|
作者：
机构：
[1] Ng, T.K.
[2] Yoon, S.F.
[3] Wang, S.Z.
[4] Lin, L.-H.
[5] 4,Ochiai, Y.
[6] Matsusue, T.
来源：
Ng, T.K. (esfyoon@ntu.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Activation energy - Annealing - Low temperature effects - Molecular beam epitaxy - Photoluminescence - Semiconductor quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.
引用
收藏
相关论文
共 50 条
  • [11] Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
    Sun, Z
    Xu, ZY
    Yang, XD
    Sun, BQ
    Ji, Y
    Zhang, SY
    Ni, HQ
    Niu, ZC
    APPLIED PHYSICS LETTERS, 2006, 88 (01)
  • [12] Laser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well
    Khee, NT
    Fatt, YS
    Fan, WJ
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 39 - 43
  • [13] Quantum well intermixing in GaInNAs/GaAs structures
    Sun, H.D. (handong.sun@strath.ac.uk), 1600, American Institute of Physics Inc. (94):
  • [14] Quantum well intermixing in GaInNAs/GaAs structures
    Sun, HD
    Macaluso, R
    Calvez, S
    Dawson, MD
    Robert, F
    Bryce, AC
    Marsh, JH
    Gilet, P
    Grenouillet, L
    Million, A
    Nam, KB
    Lin, JY
    Jiang, HX
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) : 7581 - 7585
  • [15] PHOTOLUMINESCENCE CHARACTERIZATION OF INGAAS/GAAS QUANTUM WELL STRUCTURES
    DEVINE, RLS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (12) : 1171 - 1176
  • [16] Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
    Lu, S. L.
    Bian, L. F.
    Uesugi, M.
    Nosho, H.
    Tackeuchi, A.
    Niu, Z. C.
    APPLIED PHYSICS LETTERS, 2008, 92 (05)
  • [17] Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well
    Nomura, K
    Yamada, T
    Iguchi, Y
    Takagishi, S
    Nakayama, M
    JOURNAL OF LUMINESCENCE, 2005, 112 (1-4) : 146 - 150
  • [18] Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures
    Sun, HD
    Macaluso, R
    Dawson, MD
    Robert, F
    Bryce, AC
    Marsh, JH
    Riechert, H
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1550 - 1556
  • [19] Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescence
    Yoon, HW
    Wake, DR
    Wolfe, JP
    PHYSICAL REVIEW B, 1996, 54 (04): : 2763 - 2774
  • [20] Influence of Rapid Thermal Annealing on Carrier Dynamics in GaInNAs/GaAs Multiple Quantum Wells
    Zhou Wei
    Yang Jie
    Xia Su-Jing
    Li Xiang
    Tang Wu
    CHINESE PHYSICS LETTERS, 2011, 28 (11)
12345