Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

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作者：
机构：
[1] Ng, T.K.
[2] Yoon, S.F.
[3] Wang, S.Z.
[4] Lin, L.-H.
[5] 4,Ochiai, Y.
[6] Matsusue, T.
来源：
Ng, T.K. (esfyoon@ntu.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Activation energy - Annealing - Low temperature effects - Molecular beam epitaxy - Photoluminescence - Semiconductor quantum wells;
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摘要：
The significance of variable temperature photoluminescence (PL) measurement of GaInAs/GaAs quantum well for understanding carrier dynamics was discussed. Two Gaussian functions were applied for deducing the energy separation between localized and e1 states by fitting the PL spectra. A faster rate of energy redshift was obtained for the main localized state.
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