Influences of dark line defects on characteristics of AlGaAs/GaAs quantum well lasers grown on Si substrates

被引：0
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作者：
Hasegawa, Yoshiaki [1 ]
Egawa, Takashi [1 ]
Jimbo, Takashi [1 ]
Umeno, Masayoshi [1 ]
机构：
[1] Nagoya Inst of Technology, Nagoya, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 6 A期
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页码：2994 / 2999
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