共 50 条
- [32] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
- [34] Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxy MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 95 - 98
- [37] HIGH-QUALITY STRAINED QUANTUM WIRES GROWN BY MOLECULAR-BEAM EPITAXY ON (100) GAAS SUBSTRATE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1280 - 1282
- [38] Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy NANOSCALE RESEARCH LETTERS, 2011, 6
- [39] Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy Nanoscale Research Letters, 6
- [40] INVESTIGATION OF THE OPTICAL CHARACTERISTICS OF EPITAXIAL ZNSE/GAAS(100) EPITAXIAL-FILMS GROWN BY THE METHODS OF MOLECULAR-BEAM EPITAXY AND VAPOR-PHASE EPITAXY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (07): : 698 - 700