Effect of Fe impurity in DLC films on mechanical property

被引：0
|
作者：
Xu, Junfen [1 ]
Ju, Jianhua [1 ]
Dai, Wenqi [1 ]
Xia, Yiben [1 ]
机构：
[1] Shanghai Univ, Shanghai, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2000年 / 31卷 / 01期
关键词：
Chemical vapor deposition - Film preparation - Impurities - Iron - Mechanical properties - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
DLC films which were deposited on Si substrate by radio frequency plasma chemical vapor deposition (RF-PCVD) have been described. The mechanical properties, of DLC films, were tested, the mechanical properties of the DLC films deposited by two different cathode-targets were compared. It was concluded that beside the deposited time, the content of Fe impurity affects to the mechanical properties of DLC films obviously. A new efficient method of DLC films deposited with C cathode-target was suggested. The relationship between DLC films in high quality and its experimental parameters during the deposited process was described. The results can be explained on the theory.
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页码：53 / 55
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