Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction

被引：0

作者：

Novák, J. ^{[1
,2
]}

Holý, V. ^{[2
,3
]}

Stangl, J. ^{[1
]}

Fromherz, T. ^{[1
]}

Zhong, Zhenyang ^{[1
]}

Chen, Gang ^{[1
]}

Bauer, G. ^{[1
]}

Struth, B. ^{[4
]}

机构：

[1] Institut für Halbleiterphysik, J. Kepler Universität, Altenbergerstrasse 69, A-4040 Linz, Austria

[2] Institute of Condensed Matter Physics, Masaryk University, Kotlášká 2, CZ-611 37 Brno, Czech Republic

[3] Department of Physics of Electronic Structures, Charles University, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic

[4] European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38043 Grenoble Cedex 9, France

来源：

Journal of Applied Physics | 2005年 / 98卷 / 07期

关键词：

Number:; 14684; SFB025; Acronym:; -; Sponsor:; NMP4-CT-2004-500101; EC; Sponsor: European Commission; MŠMT; Ministerstvo; Školství; Mládeže a Tělovýchovy; 202/03/0148; GA; ČR; Grantová; Agentura; České; Republiky;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] Alignment of Ge three-dimensional islands on faceted Si(001) surfaces
Sakamoto, Kunihiro
Matsuhata, Hirofumi
Tanner, Martin O.
Wang, Dawen
Wang, Kang L.
Thin Solid Films, 1998, 321 : 55 - 59
[32] Oblique stacking of three-dimensional dome islands in Ge/Si multilayers
Sutter, P
Mateeva-Sutter, E
Vescan, L
APPLIED PHYSICS LETTERS, 2001, 78 (12) : 1736 - 1738
[33] Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface
S. A. Rudin
Zh. V. Smagina
V. A. Zinovyev
P. L. Novikov
A. V. Nenashev
E. E. Rodyakina
A. V. Dvurechenskii
Semiconductors, 2018, 52 : 1457 - 1461
[34] Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space
Holy, V.
Mundboth, K.
Mokuta, C.
Metzger, T. H.
Stangl, J.
Bauer, G.
Boeck, T.
Schmidbauer, M.
THIN SOLID FILMS, 2008, 516 (22) : 8022 - 8028
[35] Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface
Rudin, S. A.
Smagina, Zh. V.
Zinovyev, V. A.
Novikov, P. L.
Nenashev, A. V.
Rodyakina, E. E.
Dvurechenskii, A. V.
SEMICONDUCTORS, 2018, 52 (11) : 1457 - 1461
[36] GROWTH OF GE AND PB ON GE(113) SURFACES STUDIED BY X-RAY DIFFRACTION AND LEED
Albrecht, M.
Hirnet, A.
Iglesias, A.
Gierer, M.
Moritz, W.
Wolf, D.
Schulz, H.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1999, 55 : 499 - 500
[37] Orientation mapping of steel by scanning three-dimensional x-ray diffraction microscopy
Hayashi, Yujiro
Seno, Yoshiki
Yoshida, Tomoyuki
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2017, 73 : C854 - C854
[38] Three-dimensional X-ray diffraction in the diamond anvil cell: application to stishovite
Nisr, Carole
Ribarik, Gabor
Ungar, Tamas
Vaughan, Gavin B. M.
Merkel, Sebastien
HIGH PRESSURE RESEARCH, 2014, 34 (02) : 158 - 166
[39] Research of several influential factors on reconstruction of three-dimensional X-ray diffraction
Yang, Yiming
Du, Guohao
Tan, Hai
Yang, Yushuang
Xiao, Tiqiao
Guangxue Xuebao/Acta Optica Sinica, 2015, 35 (12):
[40] Novel Near Field Detector for Three-Dimensional X-Ray Diffraction Microscopy
Scott Annett
Sergio Morelhao
Darren Dale
Stefan Kycia
MRS Advances, 2018, 3 (39) : 2341 - 2346

← 1 2 3 4 5 →