Radiation thermometry of silicon wafers in a diffusion furnace for fabrication of LSI

被引：0
|
作者：
机构：
[1] Watanabe, Tomoji
[2] Torii, Takuji
[3] Hirasawa, Shigeki
[4] Takagaki, Tetsuya
来源：
Watanabe, Tomoji | 1600年 / 04期
关键词：
Integrated Circuit Manufacture;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] FABRICATION OF VERTICAL SIDEWALLS BY ANISOTROPIC ETCHING OF SILICON (100) WAFERS
    ZAVRACKY, PM
    EARLES, T
    POKROVSKIY, NL
    GREEN, JA
    BURNS, BE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) : 3182 - 3188
  • [42] The Fabrication and Preservation of Nanostructures on Silicon Wafers With a Native Oxide Layer
    Huang, Jen-Ching
    Wang, Jui-Yang
    SCANNING, 2012, 34 (05) : 347 - 356
  • [43] Fabrication and bonding strength of bonded silicon-quartz wafers
    Abe, Takao
    Sunagawa, Ken
    Uchiyama, Atsuo
    Yoshizawa, Katsuo
    Nakazato, Yasuyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 334 - 337
  • [44] A study on the fabrication of the solar cells using the recycled silicon wafers
    Choi, SH
    Jeong, KJ
    Choi, TY
    Chun, HG
    KORUS 2000: 4TH KOREA-RUSSIA INTERNATIONAL SYMPOSIUM ON SCIENCE AND TECHNOLOGY, PT 3, PROCEEDINGS: MACHINE PARTS AND MATERIALS PROCESSING, 2000, : 388 - 393
  • [45] REGIONAL LOW-LEVEL LEAKAGE DISTRIBUTION AND PIPE CHARACTERISTICS IN LSI SILICON-WAFERS
    FUNG, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C106 - C106
  • [46] ANALYSIS OF ANOMALOUS BENDING OF SILICON WAFERS WITH HEAVY PHOSPHORUS DIFFUSION
    TAKANO, Y
    NAMBA, M
    MAKI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C117 - C118
  • [47] As and Sb diffusion profiles in thin silicon-on-insulator wafers
    Shibata, Yoshitake
    Ichino, Tomohiro
    Ichimura, Masaya
    Arai, Eisuke
    1600, Japan Society of Applied Physics (42):
  • [48] As and Sb diffusion profiles in thin silicon-on-insulator wafers
    Shibata, Y
    Ichino, T
    Ichimura, M
    Arai, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7A): : 4282 - 4283
  • [49] Direct bonding of silicon wafers with the concurrent formation of diffusion layers
    I. V. Grekhov
    L. S. Kostina
    T. S. Argunova
    E. I. Belyakova
    N. M. Shmidt
    K. B. Kostin
    E. D. Kim
    S. Ch. Kim
    Technical Physics, 2001, 46 : 690 - 695
  • [50] Direct bonding of silicon wafers with the concurrent formation of diffusion layers
    Grekhov, IV
    Kostina, LS
    Argunova, TS
    Belyakova, EI
    Shmidt, NM
    Kostin, KB
    Kim, ED
    Kim, SC
    TECHNICAL PHYSICS, 2001, 46 (06) : 690 - 695
12345