A spillover effect of avalanche-generated electrons in buried p-channel MOSFET's

被引：0
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作者：
Odanaka, Shinji [1 ]
Hiroki, Akira [1 ]
机构：
[1] Matsushita Electric Ind Co, Ltd,, Moriguchi, Osaka, Japan
来源：
Electron device letters | 1991年 / 12卷 / 05期
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页码：224 / 226
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