Channeling studies on self-assembled Au4Si islands on Br-passivated Si (111) surfaces

被引:0
|
作者
机构
来源
Ind J Phys Proc Ind Assoc Cultiv Sci | / 6卷 / 681期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] MIES investigation of alkanethiol monolayers self-assembled on Au(111) and Ag(111) surfaces
    Heinz, B
    Morgner, H
    SURFACE SCIENCE, 1997, 372 (1-3) : 100 - 116
  • [42] Modified herringbone reconstruction on Au(111) induced by self-assembled Azure A islands
    Rossel, Frederic
    Brodard, Pierre
    Patthey, Francois
    Richardson, Neville V.
    Schneider, Wolf-Dieter
    SURFACE SCIENCE, 2008, 602 (14) : L115 - L117
  • [43] Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands
    Valakh, MY
    Vostokov, NV
    Gusev, SA
    Drozdov, YN
    Krasil'nik, ZF
    Lobanov, DN
    Moldavskaya, LD
    Novikov, AV
    Postnikov, VV
    Stepikhova, MV
    Usami, N
    Shiraki, Y
    Yukhymchuk, VA
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 161 - 164
  • [44] Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
    Shaleev, MV
    Novikov, AV
    Yablonskiy, AN
    Drozdov, YN
    Lobanov, DN
    Krasilnik, ZF
    Kuznetsov, OA
    APPLIED PHYSICS LETTERS, 2006, 88 (01)
  • [45] Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature
    Lobanov, D. N.
    Novikov, A. V.
    Kudryavtsev, K. E.
    Shengurov, D. V.
    Drozdov, Yu. N.
    Yablonskiy, A. N.
    Shmagin, V. B.
    Krasilnik, Z. F.
    Zakharov, N. D.
    Werner, P.
    SEMICONDUCTORS, 2009, 43 (03) : 313 - 317
  • [46] Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature
    D. N. Lobanov
    A. V. Novikov
    K. E. Kudryavtsev
    D. V. Shengurov
    Yu. N. Drozdov
    A. N. Yablonskiy
    V. B. Shmagin
    Z. F. Krasilnik
    N. D. Zakharov
    P. Werner
    Semiconductors, 2009, 43 : 313 - 317
  • [47] Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces
    Kitajima, T
    Liu, B
    Leone, SR
    APPLIED PHYSICS LETTERS, 2002, 80 (03) : 497 - 499
  • [48] Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
    A. I. Mashin
    A. V. Nezhdanov
    D. O. Filatov
    M. A. Isakov
    V. G. Shengurov
    V. Yu. Chalkov
    S. A. Denisov
    Semiconductors, 2010, 44 : 1504 - 1510
  • [49] Growth and characterization of self-assembled Ge-rich islands on Si
    Techn. Univ Munchen, Garching, Germany
    Semicond Sci Technol, 11 S (1521-1528):
  • [50] Trench formation around and between self-assembled Ge islands on Si
    Denker, U
    Schmidt, OG
    Jin-Philipp, NY
    Eberl, K
    APPLIED PHYSICS LETTERS, 2001, 78 (23) : 3723 - 3725