MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

被引：0
|
作者：
Cordier, Y. [1 ]
Bollaert, S. [1 ]
diPersio, J. [1 ]
Ferre, D. [1 ]
Trudel, S. [1 ]
Druelle, Y. [1 ]
Cappy, A. [1 ]
机构：
[1] Universite de Lille 1, Villeneuve d'Ascq, France
来源：
Applied Surface Science | 1998年 / 123-124卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
19
引用
收藏
页码：734 / 737
相关论文
共 50 条
  • [21] GaAs Layers Grown on Silicon Substrates by MBE for Photovoltaic Application
    Petrushkov, Mikhail O.
    Emelyanov, Eugene A.
    Pakhanov, Nikolai A.
    Preobrazhenskii, Valerii V.
    Putyato, Mikhail A.
    Pchelyakov, Oleg P.
    2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM), 2014, : 45 - 50
  • [22] Oval defects in the MBE grown AlGaAs/InGaAs/GaAs and InGaAs GaAs structures
    Klima, K
    Kaniewska, M
    Reginski, K
    Kaniewski, J
    CRYSTAL RESEARCH AND TECHNOLOGY, 1999, 34 (5-6) : 683 - 687
  • [23] DOPING STUDY OF SE INTO ALGAAS LAYERS GROWN BY MBE, AND THEIR APPLICATION TO HEMT STRUCTURES
    MAEDA, T
    ISHIKAWA, T
    KONDO, K
    ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 239 - 244
  • [24] Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE
    Gelczuk, L.
    Serafinczuk, J.
    Darowska-Szata, M.
    Dluzewski, P.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (12) : 3014 - 3018
  • [25] Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates
    Eisenbeiser, K
    Droopad, R
    Huang, JH
    IEEE ELECTRON DEVICE LETTERS, 1999, 20 (10) : 507 - 509
  • [26] HETEROEPITAXY OF INGAAS ON GAAS SUBSTRATE WITH INALAS INTERMEDIATE LAYER
    UEDA, T
    ONOZAWA, S
    AKIYAMA, M
    SAKUTA, M
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 517 - 522
  • [27] Influence of substrate misorientation on the structural characteristics of InGaAs GaAs MQW on (111)B GaAs grown by MBE
    Gutiérrez, M
    González, D
    Aragón, G
    Sánchez, JJ
    Izpura, I
    Hopkinson, M
    García, R
    THIN SOLID FILMS, 1999, 343 : 558 - 561
  • [28] Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
    Cordier, Y
    Zaknoune, M
    Trassaert, S
    Chauveau, JM
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (11) : 5774 - 5777
  • [29] ANNEALING EFFECTS ON LATTICE DEFECTS IN LATTICE MISMATCHED INGAAS ON GAAS
    Sasaki, T.
    Arafune, K.
    Sai, A.
    Ohshita, Y.
    Kamiya, I.
    Yamaguchi, M.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 335 - 338
  • [30] PICOSECOND CHARACTERIZATION OF INGAAS INALAS RESONANT TUNNELING BARRIERS GROWN BY MBE
    MUTO, S
    TACKEUCHI, A
    INATA, T
    MIYAUCHI, E
    FUJII, T
    SURFACE SCIENCE, 1990, 228 (1-3) : 370 - 372
12345