InAs/(Al,Ga)Sb quantum well structures for magnetic sensors

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作者：
IMEC vzw, Leuven, Belgium [1 ]
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来源：
IEEE Trans Magn | / 4 pt 1卷 / 1300-1302期
关键词：
Electron transport properties - Hall effect - Magnetoresistance - Molecular beam epitaxy - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting indium compounds - Semiconductor device structures - Semiconductor quantum wells - Sensors;
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摘要：
This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and good temperature stability. InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 30,000 cm2/Vs at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity of 0.46%/mT) and Hall elements (magnetic sensitivity of 5.5 V/T).
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