LASER BEAM DEFOCUSING AT 1. 06 mu m BY CARRIER EXCITATION IN SILICON.

被引：0

作者：

Chen Jun ^{[1
]}

Eichler, H.-J. ^{[1
]}

机构：

[1] Technische Univ Berlin, Berlin, West Ger, Technische Univ Berlin, Berlin, West Ger

来源：

Applied physics. B, Photophysics and laser chemistry | 1988年 / B45卷 / 03期

关键词：

LASERS; SOLID STATE - SEMICONDUCTING SILICON - Charge Carriers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Laser beams from a 15 ns pulsed Nd:YAG laser are defocused after passing silicon crystals with 400 mu m thickness. The beam profile changes into a ring structure at incident laser energies up to 30 mJ and energy densities of 440 mJ/cm**2. The experimental deflection angles agree with calculations assuming refractive index changes due to electron-hole pairs produced by interband absorption.

引用

页码：121 / 124

共 50 条

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