Characterization of low-temperature GaAs by galvanomagnetic and photoluminescence measurements

被引:0
|
作者
Slovak Acad of Sciences, Bratislava, Slovakia [1 ]
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
13
引用
收藏
相关论文
共 50 条
  • [21] LOW-TEMPERATURE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF GAN
    DISSANAYAKE, A
    LIN, JY
    JIANG, HX
    YU, ZJ
    EDGAR, JH
    APPLIED PHYSICS LETTERS, 1994, 65 (18) : 2317 - 2319
  • [22] INFRARED-ABSORPTION AND LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GAAS GROWN BY MBE
    AKIMOTO, K
    DOHSEN, M
    ARAI, M
    WATANABE, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 622 - 622
  • [23] Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
    Brammertz, Guy
    Mols, Yves
    Degroote, Stefan
    Motsnyi, Vasyl
    Leys, Maarten
    Borghs, Gustaaf
    Caymax, Matty
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
  • [24] AMBIENT AND LOW-TEMPERATURE PHOTOLUMINESCENCE TOPOGRAPHY OF GAAS SUBSTRATES, EPITAXIAL AND IMPLANTED LAYERS
    WANG, ZM
    WINDSCHEIF, J
    AS, DJ
    JANTZ, W
    APPLIED SURFACE SCIENCE, 1991, 50 (1-4) : 228 - 232
  • [25] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAAS UNDER CONDITIONS OF STRONG INTERACTION OF NONEQUILIBRIUM CARRIERS
    BAGAEV, VS
    STOPACHINSKII, VB
    PADUCHIKH, LI
    JETP LETTERS-USSR, 1972, 15 (09): : 360 - +
  • [26] Low-temperature galvanomagnetic transport coefficients of the two-dimensional hot electrons in GaAs quantum wells
    Sarkar, SK
    Ghosh, PK
    Chattopadhyay, D
    SOLID STATE COMMUNICATIONS, 1999, 109 (01) : 13 - 17
  • [27] LOW-TEMPERATURE GALVANOMAGNETIC PHENOMENA IN INTENSE ELECTRIC FIELD
    BUDD, HF
    PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1281 - &
  • [28] Spectroscopic characterization of low-temperature grown GaAs epitaxial films
    Tani, Masahiko
    Sakai, Kiyomi
    Abe, Hajime
    Nakashima, Shin-ichi
    Harima, Hiroshi
    Hangyo, Masanori
    Tokuda, Yasunori
    Kanamoto, Kyozo
    Abe, Yuji
    Tsukada, Noriaki
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 A): : 4807 - 4811
  • [29] Growth and characterization of carbon-doped low-temperature GaAs
    Herfort, J
    Ulrici, W
    Moreno, M
    Ploog, KH
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1440 - 1444
  • [30] LOW-TEMPERATURE GROWTH AND CHARACTERIZATION OF ZNSE FILMS GROWN ON GAAS
    STANZL, H
    WOLF, K
    BAUER, S
    KUHN, W
    NAUMOV, A
    GEBHARDT, W
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 501 - 503