New method of measurement of photoelectric parameters of wafers with p-n junctions

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Elektrokhimiya | / 61卷 / 73-78期

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[31] Implanted p-n junctions in GaN
Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States
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Solid-State Electron., 7 (1235-1238):
[32] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
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[33] ANOMOLOUS RECOMBINATIONS IN P-N JUNCTIONS
BRIENT, SJ
WILSON, CL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
[34] p-n junctions in molybdenum ditelluride
Bernede, JC
Kettaf, M
Khelil, A
Spiesser, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 157 (01): : 205 - 209
[35] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[36] Electron holography of p-n junctions
Frost, BG
Joy, DC
Allard, LF
Volkl, E
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 595 - 598
[37] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN ZNSE
LOZYKOWSKII, H
CZECHOSLOVAK JOURNAL OF PHYSICS, 1963, 13 (02) : 164 - &
[38] BOUNDARY CONDITIONS AT P-N JUNCTIONS
HAUSER, JR
SOLID-STATE ELECTRONICS, 1971, 14 (02) : 133 - &
[39] ON MODE CONFINEMENT IN P-N JUNCTIONS
LEITE, RCC
YARIV, A
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[40] CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS
WITTRY, DB
KYSER, DF
JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1387 - &